Qorvo Launches The Industry's Most Powerful Gan-on-sic Transistor

Qorvo, a leading provider of RF solutions for mobile applications, infrastructure and aerospace, and defense applications, today introduced the world’s highest power GaN-on-SiC RF transistor, QPD1025 . The QPD1025 operates at 1.8 kW at 65 V, providing excellent signal integrity and greater range, which is critical for L-band avionics applications.

Asif Anwar, Strategy Analytics's executive director of strategic technology, said, "Qorvo's QPD1025 transistor is a truly disruptive product on the market. Compared to silicon-based LDMOS and silicon bipolar devices, it offers not only the same pulse power and Duty cycle performance also has a significant increase in efficiency. This high-power and high-efficiency solution from Qorvo eliminates the need for high-temperature materials such as diamond in the thermal management process and is highly cost-effective."

Roger Hall, general manager of Qorvo's High Power Solutions Division, said, "This new high-power transistor can realize a multi-kilowatt solution without the complex operation of an amplifier, which can save customers time and cost. Compared with LDMOS, QPD1025 Drainage efficiency has been significantly improved and efficiency is nearly 15 percentage points higher, which is very important for IFF and avionics applications."

Qorvo offers the largest and most innovative GaN-on-SiC product portfolio in the industry. Qorvo products feature high power density, small size, excellent gain, high reliability, and proven technology. Mass production began in 2000. For more information on Qorvo's GaN-on-SiC product advantages, see here and watch the video.

Engineering samples of QPD1025 are available now.